表达式
- w tilde
- hat y
- x dagger
行文
- w.r.t = with regard to = about
- peculiar aspects
- not easily extendable to other devices
- corpuscular 微小的 重音2
- The following paragraphs will deal with those issues in detail.
- simplified and tractable model of the actual device
- a top view of the device 俯视图
- The contacts extend over areas of few thousand um2. 接触的面积
- The separation between S and D is a few um. 距离
- There's no significant variation of physical quantity along the direction perpendicular to the x-y plane.
- spatial inhomogenities along the z direction
- The barrier is reduced when a positive bias is applied to the semiconductor and it is increased for the opposite polarity.
- The sum is over the mesh points / super-particles.
- reproduce the physical reality
- accuracy of the results VS the cost effectiveness of the algorithm
- by varing the gate and drain bias 改变电压 vary the bias
- By collecting the above results, we have ... 整理上面的公式可以得到
- This section surveys the history of instruction set architectures (ISAs) over time.
- one can readily argue that
- the research on xxx was shrunk. 研究变少
- Rapid progress in xxx was promptly followed by xxxx.
- Raison d'etre 存在的理由
- The Ge- and Si-based technologies were spawned in 1947 by the demonstration of the first transistor. 雨后春笋般出现
几个容易忘记的点
金属半导体接触
- 外加电压是调整半导体一侧的电压降，金属一侧认为没有电压降
- 真空能级连续，但是不是constant，电子亲和能是不变的，所以真空能级也相应弯曲。
- J = Js * [exp(qv/nkT) - 1] 低掺杂时，Js是常量，n接近1；掺杂浓度提高，I-V曲线就越发不像pn结了。
-
电流类型四种
MESFET
- GaAs不做MOSFET，因为表面态太大了。Si不怎么做MESFET，因为允许加的电势太小？？
- unipolar device
- 一种 JFET（另一种是PNJFET）
- epitaxial layer of GaAs 掺杂浓度一般为 10^17 cm-3，长在semi-insulating GaAs substrate上。
GaAs
- Drift velocity VS field curve presents a maximum at fields around 3 kV/cm at room temperature.
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